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近日,飞利浦公司宣布在LDMOS技术上取得了重大突破,可降低3G蜂窝基站的复杂性和运营成本,同时大大增强性能和可靠性。采用这种技术生产的射频功率晶体管与现有LDMOS器件相比,增益更大,运行效率更高。因此,射频功率放大器需要的增益级数更少,运行能量消耗更少。这些新型晶体管具
Recently, Philips announced a major breakthrough in LDMOS technology that will reduce the complexity and operating costs of 3G cellular base stations, while greatly enhancing performance and reliability. The RF power transistor produced with this technology offers greater gain and higher operating efficiency than existing LDMOS devices. As a result, RF power amplifiers require fewer stages of gain and consume less operating energy. These new transistor