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用在CdTe衬底上外延生长的HgCdTe制备了MIS场效应晶体管。平面n沟道场效应晶体管用ZnS作绝缘层,同时通过注入Be离子形成源和漏区。在77K时表面迁移率为7×10~3厘米~3/伏秒。
MIS field effect transistors were fabricated using HgCdTe grown epitaxially on CdTe substrates. A planar n-channel field effect transistor uses ZnS as an insulating layer while forming a source and drain region by implanting Be ions. Surface mobility at 77K is 7 × 10 -3 cm -3 / volt-seconds.