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The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4×100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor.The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb.A Sb composition variation of less than ±0.1 atomic percent across a 4×100mm platen configuration has been achieved.The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BV_CEO>6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm×50μm.The devices have a 40nm thick GaAsSb base with p-doping of 4.5×1019cm-3.Devices with an emitter size of 4μm×30μm have a current gain variation less than 2% across the fully processed 100mm wafer.f_t and f_max are over 50GHz,with a power efficiency of 50%,which are comparable to standard power GaAs HBT results.These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.
The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100 mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities were obtained from 100 nm thick carbon-doped GaAsSb.A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100 mm platen configuration has been achieved. The large area InAlAs / GaAsSb / InP DHBT device demonstrates excellent DC characteristics, such as BV_CEO> 6V and a DC current gain of 45 at 1 kA / cm2 for an emitter size of 50 μm × 50 μm. The devices have a 40 nm thick GaAsS base with p-doping of 4.5 × 10 19 cm -3 . Devices with an emitter size of 4 μm × 30 μm have a current gain variation less than 2% across the fully processed 100 mm wafer. F_t and f_max are over 50 GHz, with a power efficiency of 50%, which are comparable to standard power GaAs HBT results These results demonstrate th e potential application of GaAsSb / InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.