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本文概要叙述了128元长波碲镉汞焦平面器件的原理及研制工艺；CMOS互连后测试结果：峰值Dλ＝3．4×1010cmHz1／2W－1，Rvλ＝1．2×108V／W，利用128元长波碲镉汞焦平面器件研制成功的热像仪成像情况。
In this paper, the principle and development process of a 128-element long-wave mercury cadmium telluride (HgCdTe) focal plane device are described briefly. The test results after CMOS interconnection are as follows: the peak Dλ = 3.4 × 1010cmHz1 / 2W-1 and Rvλ = 1.2 × 108V / 128 yuan long wave HgCdTe Hg focal plane device developed by the successful imaging camera.