多晶氧化物薄膜及复合膜系应力模型

来源 :光学学报 | 被引量 : 0次 | 上传用户:zzjokok
下载到本地 , 更方便阅读
声明 : 本文档内容版权归属内容提供方 , 如果您对本文有版权争议 , 可与客服联系进行内容授权或下架
论文部分内容阅读
基于膜层结构的弛豫现象,建立了一个多晶膜的应力演化模型,并通过线性组合给出了复合膜的生长应力模型。利用双光束基底曲率测量装置实时测量了电子束蒸发氧化铪、氧化硅多晶膜及其复合膜的应力演化过程,并对测量结果进行了拟合分析。 Based on the relaxation phenomenon of the film structure, a stress evolution model of the polycrystalline film was established, and the growth stress model of the composite film was given by linear combination. The stress evolution of hafnium oxide oxide, polycrystalline silicon oxide film and their composite films by electron beam evaporation was measured in real time using the double-beam curvature measuring device. The measured results were fitted and analyzed.
其他文献