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介绍了一种超高压锗硅异质结双极晶体管(SiGe HBT)的器件结构及制作工艺。该器件增大了N型赝埋层到有源区的距离,采用厚帽层锗硅基区及低浓度发射区的制作工艺,以提高SiGe HBT的击穿电压;在基区和发射区之间利用快速热处理提高工艺稳定性,并使HBT的电流增益(β)恢复到原来水平,以弥补厚帽层锗硅基区及低发射区浓度造成的电流增益降低。基区断开时,发射区到集电区的击穿电压(BVCEO)提高至10V,晶体管特征频率达到20GHz。
A device structure and manufacturing process of an ultrahigh-voltage SiGe HBT are introduced. The device increases the distance between the N-type pseudo-buried layer and the active area by adopting a manufacturing process of a thick cap layer of Si-Si base region and a low-concentration emitter region to improve the breakdown voltage of the SiGe HBT. In the base region and the emitter region Rapid heat treatment was used to improve the process stability and restore the current gain (β) of the HBT to the original level to compensate for the decrease of the current gain caused by the Si capped Si layer and the low emission area concentration. When the base is disconnected, the breakdown voltage (BVCEO) from the emitter to the collector increases to 10V, and the characteristic frequency of the transistor reaches 20GHz.