用磁控射频溅射方法制备 Indium- Tin- Oxide(ITO)薄膜 ,研究了基片温度对薄膜结构、光、电性质的影响 .基片温度 41 0°时 ,结晶最好 ,相应的电学性质最优 ,并且解释了电学性质随结构变化的微观原因 .样品在可见光谱区的平均透过率超过 80 % ,受基片温度影响不大 ,确定薄膜的光能隙为 3.55ev Indium-Tin-Oxide (ITO) films were prepared by magnetron RF sputtering and the effects of substrate temperature on the structure, optical and electrical properties of the films were investigated. The best crystallinity was obtained at 41 0 ° C and the corresponding electrical properties And explained the microscopic reason that the electrical properties changed with the structure.The average transmittance of the sample in the visible region was more than 80%, which was not affected by the temperature of the substrate. The optical gap of the film was determined to be 3.55 eV