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中频感应加热提拉法生长了低钕掺杂的GdVO_4晶体,用机械分析仪来测量Nd:GdVO_4晶体的热膨胀系数,沿c方向的热膨胀系数为7.42×10~(-6)/K,而沿α方向的热膨胀系数只有1.05×10~(-6)/K,比同比Nd_(0.0045)Y_(0.9946)VO_4晶体样品测量结果小。差示扫描热计法测量了Nd:GdVO_4晶体的比热,298K时为0.52J/g·K。首次用激光脉冲法测量了Nd:GdVO_4晶体的室温热导率。实验表明,Nd:GdVO_4晶体沿<001>方向的热导率数值达11.4W/m·K,比Nd:YAG晶体高(测得10.7W/m·K),其<100>方向的热导率为10.1W/m·K。激光实验显示在较高功率泵浦激光输出上Nd:GdVO_4晶体具有比Nd:YVO_4晶体更加优良的性能。
The low-neodymium-doped GdVO_4 crystal was grown by intermediate-frequency induction heating and pulling method. The thermal expansion coefficient of Nd: GdVO_4 crystal was measured by mechanical analyzer. The coefficient of thermal expansion along c direction was 7.42 × 10 -6 / K, The thermal expansion coefficient in α direction is only 1.05 × 10 -6 / K, which is smaller than that of Nd_ (0.0045) Y_ (0.9946) VO_4 crystal sample. The specific heat of the Nd: GdVO 4 crystal was measured by differential scanning calorimeter, which was 0.52 J / g · K at 298K. The thermal conductivity at room temperature of Nd: GdVO_4 crystal was measured by laser pulse method for the first time. The experimental results show that the thermal conductivity of Nd: GdVO 4 crystal in the <001> direction reaches 11.4 W / m · K, which is higher than that of the Nd: YAG crystal (10.7 W / m · K) Rate of 10.1W / m · K. Laser experiments show that Nd: GdVO_4 crystals have better performance than Nd: YVO_4 crystals at higher power pump laser output.