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采用金属辅助化学刻蚀方法结合纳米球模板技术制备出了有序硅纳米线阵列。硅纳米线阵列经过高温热氧化形成一定厚度的氧化层,再使用稀释的HF溶液去除表面氧化层得到可控直径/周期比、低孔隙密度的有序纳米线阵列。主要研究了氧化温度、氧化时间对硅纳米线形貌的影响,并根据扩展的Deal-Grove模型计算了硅纳米线氧化层厚度与氧化时间的关系,讨论了氧化过程中应力分布的影响,理论计算结果与实验结果一致。最后,采用两步氧化的方法制备出了低直径/周期比(约0.1)、低孔隙密度的有序硅纳米线阵列。
An ordered silicon nanowire array was prepared by metal assisted chemical etching combined with nanosphere template technology. The silicon nanowire arrays are thermally oxidized at high temperature to form a certain thickness of the oxide layer, and then the surface oxide layer is removed by using diluted HF solution to obtain an ordered nanowire array with controlled diameter / period ratio and low porosity. The effects of oxidation temperature and oxidation time on the morphology of silicon nanowires were mainly studied. The relationship between the thickness of silicon nanowires and the oxidation time was calculated according to the extended Deal-Grove model. The effect of stress distribution during the oxidation process was discussed. The theory The calculation results are consistent with the experimental results. Finally, an ordered silicon nanowire array with a low diameter / period ratio (about 0.1) and a low pore density was prepared by a two-step oxidation process.