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采用MEVVA源将低能量(40 keV)C离子注入单晶硅,用Raman光谱和SEM对试样进行了表征,用纳米压痕仪和球-盘式摩擦磨损试验机分别测试了试样硬度、弹性模量和摩擦因数。结果显示,低剂量下,试样硬度基本保持不变,而弹性模量增加;当C离子注入剂量为2×1016cm-2时,样品出现明显非晶化,硬度开始下降。注样表面摩擦因数升高,这是由于C离子注入引起的表面损伤所致。
Low energy (40 keV) C ions were implanted into single crystal silicon with MEVVA source. The samples were characterized by Raman spectroscopy and SEM. The hardness of the sample was tested by nanoindenter and ball-and-disk friction and wear tester. Elastic modulus and friction factor. The results show that under low dose, the hardness of the sample remains unchanged and the elastic modulus increases. When the dose of C ion implantation is 2 × 1016cm-2, the sample shows obvious amorphization and the hardness begins to decrease. Injection surface friction coefficient increased, which is due to C ion implantation caused by surface damage.