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讨论了全离子注入外延硅 NPN 双极微波晶体管的制造和分析。用来形成发射区和基区的掺杂剂分别是注入砷离子和硼离子。砷是在150千电子伏能量下以1×10~(16)/厘米~2剂量注入,而硼则用50千电子伏、8×10~(13)/厘米~2和20千电子伏、4×10~(13)/厘米~2两种条件注入。制成了具有2微米发射极条宽和3微米发射极—基极间距的结构,其S—参数由实验测定。得到实验最高振荡频率 f_(max)=6.0千兆赫,而按T—型等效电路和由已知的几何尺寸和浓度分布得到的器件电路参数所计算的 f_(max)为6.4千兆赫。充分地讨论了制造中所采用的工艺过程。
The fabrication and analysis of all-ion implanted epitaxial silicon NPN bipolar microwave transistors are discussed. The dopants used to form the emitter and base regions are implanted with arsenic ions and boron ions, respectively. Arsenic is implanted at a dose of 1 × 10 16 / cm 2 at 150 keV, whereas boron is implanted at 50 keV, 8 × 10 13 / cm 2 and 20 keV, 4 × 10 ~ (13) / cm ~ 2 two conditions of injection. Structures were made with a 2 micron emitter width and a 3 micron emitter-base spacing, with S-parameters determined experimentally. The experimental maximum oscillation frequency, f max, was found to be 6.0 GHz, whereas the f max calculated for T-type equivalent circuits and device circuit parameters derived from known geometrical dimensions and concentration profiles was 6.4 GHz. Fully discussed the manufacturing process used.