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随着市场对射频微波电路性能要求的不断提高,半导体器件的制作工艺受到射频微波工程师们广泛的关注,对于给定结构但实际上无法制作的器件,利用工程方法来获得半导体的结构及特性,能够达到所需的器件指标。本文是在对半导体基础器件内部结构深入了解的情况下,证实了当基区宽度(W)远远小于基区少数载流子扩散长度()的极限条件下准中性基区中载流子浓度的微扰是位置的线性函数。同时通过理论推导证明了当基区宽度(W)等于基区少数载流子扩散长度()的条件下,准中性基区中载流子浓度的微扰近似是位置的线性函数。利用以上推导结果可以简化晶体管参数的计算,也为改善晶体管工艺打下基础。最后编写了Lab-VIEW程序从直观上证明了结论的正确性。
With the continuous improvement of the performance requirements of radio frequency microwave circuits in the market, the manufacturing processes of semiconductor devices are widely concerned by radio frequency microwave engineers. By using engineering methods to obtain the structure and characteristics of semiconductors for a given structure but not actually making devices, To achieve the desired device specifications. This article is based on the deep understanding of the internal structure of the semiconductor basic device, confirms that when the base width (W) is far less than the limit of the base minority carrier diffusion length () The concentration of perturbations is a linear function of the position. At the same time, the theoretical derivation proves that the perturbation approximation of the carrier concentration in the quasi-neutral base region is a linear function of the position when the width of the base region (W) is equal to the diffusion length of the minority carriers in the base region. The above derivation results can simplify the calculation of transistor parameters and lay a foundation for improving the transistor technology. The final preparation of the Lab-VIEW program from the intuitive proof of the conclusions of the correctness.