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用共蒸发法制备了 Cd1 - x Znx Te多晶薄膜 ,薄膜结构属立方晶系空间群 F4 3m.通过透射光谱的测量 ,计算光能隙 ,得到室温时薄膜的光能隙随组分 x值的变化满足二次方关系 .作为对异质结界面的修饰 ,提出了有 Cd1 - x-Znx Te过渡层的 Cd S/ Cd Te/ Cd1 - x Znx Te/ Zn Te∶ Cu电池 .并在相同工艺下制备了 Cd S/ Cd Te/ Cd0 .4 Zn0 .6 Te/ Zn Te∶ Cu与 Cd S/ Cd Te/ Zn Te∶ Cu太阳电池 ,发现前者比后者效率平均增加了 35 .0 % .
The Cd1 - xZnxTe polycrystalline thin films were prepared by co - evaporation method, and the film structure belongs to the cubic system space group F4 3m.The light gap was calculated by measuring the transmission spectrum, Of CdS / CdTe / Cd1-xZnxTe / ZnTe: Cu cells with Cd1-x-ZnxTe transition layer were proposed to modify the heterojunction interface.At the same time, CdTe / Cd0.4Ti0.6Te / ZnTe:Cu and CdS / CdTe / ZnTe:Cu solar cells were prepared under the same conditions, and the former efficiency was increased by 35.0% compared with the latter.