论文部分内容阅读
根据大量的实验检测结果,对掺杂 Si、Al、K 钨丝中充钾气泡的形成与弥散化规律以及钾泡对位错运动和晶界迁移的作用等问题进行了详细的分析。提出了有序排列钾泡的形成与分裂弥散的模型,给出了计算钾泡基本参数的公式,讨论了掺杂钨丝特殊再结晶晶粒形成的可能模型。并提出了钾泡所引起的特殊大长宽比晶粒结构所导致的高温下的组织强化以及大量钾泡本身与位错的交互作用是掺杂钨丝气泡强化的主要机制。
According to a large number of experimental results, the formation and dispersion of potassium-filled gas bubbles in the doped Si, Al, K tungsten wires and the effect of potassium bubbles on the dislocation movement and grain boundary migration were analyzed in detail. A model for the formation and division of ordered potassium bubbles was proposed. The formula for calculating the basic parameters of potassium was given. The possible models for the formation of special recrystallized grains of tungsten filament were discussed. The main mechanism of the strengthening of tungsten-doped gas bubbles is proposed by the fact that the interaction between potassium foam itself and the dislocations is caused by the high-temperature microstructure strengthening caused by the special large aspect ratio grain structure caused by potassium foam.