喷涂法制备缓冲层CuI薄膜的生长(英文)

来源 :Transactions of Nonferrous Metals Society of China | 被引量 : 0次 | 上传用户:q412202242
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采用乙腈为溶剂的喷涂工艺制备晶粒尺寸约为35nm的CuI薄膜。研究乙腈溶液中碘掺杂浓度对CuI薄膜结构、形貌和光学性能的影响。XRD衍射结果表明:碘掺杂的CuI薄膜具有γ态立方闪锌矿结构,沿(111)晶面择优取向生长。SEM结果显示CuI薄膜的微结构与乙腈溶液中碘掺杂量有关;当乙腈溶液中掺杂碘为0.025g时,所制备的CuI薄膜均匀、致密,在可见光区域光学透过率可达75.4%,禁带宽度接近2.96eV。 A CuI thin film with a grain size of about 35 nm was prepared by a spray process using acetonitrile as a solvent. The effect of iodine doping concentration in acetonitrile solution on the structure, morphology and optical properties of CuI films was investigated. The results of XRD showed that the iodine-doped CuI films had a γ-state cubic sphalerite structure and grew preferentially along the (111) plane. SEM results showed that the microstructure of CuI film was related to the amount of iodine doping in acetonitrile solution. When the iodine content in acetonitrile solution was 0.025g, the prepared CuI film was uniform and compact, and the optical transmittance in the visible region reached 75.4% , The band gap close to 2.96eV.
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