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一、引言自从七十年代初,性能优良的GaAsFET在国外开始投放市场以来,整个七十年代就成了GaAsFET飞速发展的时期。与过去的双极晶体管相比,GaAsFET的频率高(目前工作频率已达40GHz)、噪声低(目前已达12GHz下,N_F=1.3dB,4GHz下,N_F=0.5dB)、功率大(目前已达18GHz下连续输出2W,3.5GHz下连续输出20W)、速度快(目前已达单门延迟时间12ps)。因而它的应用愈来愈广,部件化产品也愈来愈多。其中微波低噪声放大器和微波功率放大器就是两个重要的应用方面。作为一个微波器件,要发挥其微波性能,微波电路的设
I. Introduction Since the early seventies, GaAsFET with excellent performance has been on the market in foreign countries since the seventies has become a GaAsFET rapid development period. Compared with bipolar transistors in the past, the GaAsFET has a high frequency (currently operating at 40GHz) and low noise (currently up to 1.3GHz at 12GHz and N_F = 0.5dB at 4GHz) Up to 18GHz continuous output 2W, 3.5GHz continuous output 20W), fast (currently has reached a single door delay time 12ps). Therefore, its application is more and more widely, more and more parts products. Among them, microwave low noise amplifier and microwave power amplifier are two important application aspects. As a microwave device, to play its microwave performance, microwave circuit design