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With an n-AlGaN(4 nm)/GaN(4 nm) superlattice(SL) inserted between an n-GaN and an InGaN/GaN multiquantum well active layer,the efficiency droop of GaN-based LEDs has been improved.When the injection current is lower than 100 mA,the lumen efficiency of the LED with an n-AlGaN/GaN SL is relatively small compared to that without an n-AlGaN/GaN SL.However,as the injection current increases more than 100 mA,the lumen efficiency of the LED with an n-AlGaN/GaN SL surpasses that of an LED without an n-AlGaN/GaN SL. The wall plug efficiency of an LED has the same trend as lumen efficiency.The improvement of the efficiency droop of LEDs with n-AlGaN/GaN SLs can be attributed to a decrease in electron leakage due to the enhanced current spreading ability and electron blocking effect at high current densities.The reverse current of LEDs at -5 V reverse voltage decreases from 0.2568029 to 0.0070543μA,and the electro-static discharge(ESD) pass yield of an LED at human body mode(HBM)-ESD impulses of 2000 V increases from 60%to 90%.
The efficiency droop of GaN-based LEDs has been improved. Since the injection (n-GaN) of an n-GaN and an InGaN / GaN multiquantum well active layer current is lower than 100 mA, the lumen efficiency of the LED with an n-AlGaN / GaN SL is more small compared to that without an n-AlGaN / GaN SL.However, as the injection current increases more than 100 mA, the lumen efficiency of the LED with an n-AlGaN / GaN SL surpasses that of an LED without an n-AlGaN / GaN SL. The wall plug efficiency of an LED has the same trend as lumen efficiency. improvement of the efficiency droop of LEDs with n-AlGaN / GaN SLs can be attributed to a decrease in electron leakage due to the enhanced current spreading ability and electron blocking effect at high current densities. The reverse current of LEDs at -5 V reverse voltage decreases from 0.2568029 to 0.0070543 μA, and the electro-static discharge (ESD) pass yield of an LED at human body mode (HBM) -ESD impulses of 2000 V increases from 60% to 90%.