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采用元素共蒸发法结合退火处理制成了AlSb多晶薄膜.利用X射线衍射、透射光谱、暗电导温度关系等方法研究了薄膜的结构、光学和电学性质.发现540℃退火后得到的AlSb多晶薄膜呈立方相结构,间接跃迁光能隙为1.62eV,电导激活能约为0.33eV.研究结果表明,AlSb薄膜有可能成为新型太阳电池的重要材料.
AlSb polycrystalline thin films were fabricated by elemental co-evaporation combined with annealing treatment.The structure, optical and electrical properties of the films were investigated by means of X-ray diffraction, transmission spectra and dark conductance. The results show that AlSb The crystalline film has a cubic phase structure with an indirect transition photonic bandgap of 1.62eV and a conductance activation energy of about 0.33eV.The results show that the AlSb thin film is likely to become an important material for novel solar cells.