引言无论从系统的观点点还是从器件小型化的观点,都曾广泛地讨论过数字电子学的物理限制。然而,我们有几个原因要对后一种观点加以重新考虑。与早先的假定相反,氧化层的击穿电压已不是 MOS 器件的主要限制了,而且,目前用离子注入技术获得的高性电路已具有 INTRODUCTION The physical limitations of digital electronics have been discussed extensively both from a system point of view and from the viewpoint of device miniaturization. However, there are several reasons why we should reconsider this latter point of view. Contrary to earlier assumptions, the breakdown voltage of the oxide layer is not a major limitation of MOS devices, and the high-current circuits currently available with ion implantation technology already have