本文叙述了微波低噪声双极晶体管最大可用功率增益计算的一种方法,即从器件的等效电路出发,通过数值求解得到器件的S参数,从而计算其功率增益。计算中考虑了内引线和封装所引入的一些寄生参量的影响。使用电子计算机进行计算。作为实例,给出了10千兆赫下工作的微波低噪声晶体管增益计算的一些结果,并对影响增益的某些因素进行了分析和讨论。 This paper describes a method for calculating the maximum available power gain of a microwave low noise bipolar transistor. From the equivalent circuit of the device, the S parameters of the device are obtained numerically to calculate the power gain. The calculations take into account the effects of some parasitic parameters introduced by the inner leads and the package. Calculate using a computer. As an example, some results of gain calculation of microwave low noise transistor operating at 10 GHz are given, and some factors that affect the gain are analyzed and discussed.