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目的采用简单易行的方法,制备以碳纳米管定向网络为导电沟道的场效应晶体管。方法采用氧化及酸处理的方法对碳纳米管进行提纯,用高频交流电泳在电极间形成碳纳米管的定向网络,并据碳纳米管的导电特性确定半导体性碳纳米管的耗尽栅压,利用大电流烧蚀法去除金属性碳纳米管。结果制备出背栅型碳纳米管定向网络场效应晶体管,测量了输出特性。结论经过提纯处理的碳纳米管纯度提高,碳纳米管在电极间的定向分布效果随交流电场频率的提高而改善,制备出的碳纳米管场效应晶体管具备一定的场效应特性。
Objective To prepare a field-effect transistor with a carbon nanotube oriented network as a conductive channel by a simple and easy method. Methods The carbon nanotubes were purified by oxidation and acid treatment. The orientation networks of carbon nanotubes were formed between the electrodes by high frequency AC electrophoresis. The depletion gate voltage of the semiconductive CNTs was determined according to the conductivity of carbon nanotubes , The use of high-current ablation method to remove metallic carbon nanotubes. As a result, back-gate carbon nanotube field-effect transistors were fabricated and their output characteristics were measured. Conclusion The purity of carbon nanotubes (CNTs) treated by purification increased. The directional distribution of carbon nanotubes (CNTs) between electrodes improved with the increase of AC electric field frequency. The prepared CNTs had certain field-effect characteristics.