采用无掩模反应离子刻蚀法制备了黑硅。利用扫描电子显微镜及紫外-可见-近红外分光光度计研究了黑硅的微结构和光学特性。结果表明,黑硅微结构高度为2.0~3.5μm,径向尺寸90~400nm,间距200~610nm。在400~1 000nm光谱范围内黑硅吸收率为94%,是单晶硅的1.5倍;在1 200~1 700nm光谱范围吸收率为55%~60%,是B掺杂单晶硅的20倍。制备的黑硅的光学带隙为0.600 6eV,吸收光谱明显向红外方向偏移。 Black silicon was prepared by maskless reactive ion etching. The microstructure and optical properties of black silicon were studied by scanning electron microscopy and UV-Vis-NIR spectroscopy. The results show that the black silicon microstructure height of 2.0 ~ 3.5μm, the radial size of 90 ~ 400nm, spacing 200 ~ 610nm. In the spectral range of 400-1000 nm, the absorptivity of black silicon is 94%, which is 1.5 times that of monocrystalline silicon. The absorptance in the spectrum range of 1 200 ~ 1 700 nm is 55% ~ 60% Times The optical band gap of the prepared black silicon is 0.600 6eV, and the absorption spectrum is obviously shifted to the infrared direction.