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日本三洋电气有限公司研制成一种卫星信号接收机用的梁式引线 GaAs 肖特基势垒混频二极管。这种梁式引线二极管的制作,是采用聚酰亚胺材料作为厚绝缘膜来降低寄生电容、采用双液相外延层来降低串联电阻。二极管的规格是:串联电阻0.5欧姆、二极管电容0.15微微法(包括测量的0.03微微法的寄生电容)、击穿电压7～9伏、截止频率为2千兆赫。这种二极管的制作,还采用液相外延法在 N+-GaAs 上生长具有很高电导率的掺 Sn 有源层和掺 Te 的缓冲层。在台面腐蚀以后,采用 Au-Ge-Ni 金属化和镀金层以形成欧姆接触。然后,形成直
Japan's Sanyo Electric Co., Ltd. developed into a satellite signal receiver beam GaAs Schottky barrier hybrid diode. The production of such a beam-type lead diode uses a polyimide material as a thick insulating film to reduce the parasitic capacitance, and uses a two-phase liquid crystal epitaxial layer to reduce the series resistance. Diode specifications are: Series Resistance 0.5 Ohm, Diode Capacitance 0.15 pico-method (including measured 0.03 picofarad parasitic capacitance), breakdown voltage 7-9 V, and cut-off frequency 2 gigahertz. The diode is also fabricated by liquid-phase epitaxy method to grow Sn-doped active layer and Te-doped buffer layer with high conductivity on N + -GaAs. After the mesa is etched, an Au-Ge-Ni metallization and gold plating is used to form an ohmic contact. Then, form straight