对测量蒸镀薄膜热扩散的脉冲加热技术已作了改进。该法利用电容贮能的脉冲电源系统将薄膜基片电阻加热到1,000到3,000K。迅速加热(时间间隔为20μs)不仅可以研究薄膜镀层,而且可以收集材料的有关数据,在高温时材料的结构要逐渐发生变化,或者出现质量损失。试验薄膜样品是在钨或钼基片上用电子束蒸镀5至10μm的钪制备的。测量中利用钪和氘化钪两种样品。这些相对于基片而言电阻率较高的薄膜在电脉冲后用热扩散进行初步加热。这种热扩散是 The pulse heating technique for measuring the thermal diffusion of vapor deposited films has been improved. The method uses a capacitive energy storage pulse power system to film substrate resistance to 1,000 to 3,000K. Rapid heating (20-μs intervals) not only studies thin-film coatings but also collects data on the material that undergoes gradual changes in structure or mass loss at elevated temperatures. The test film samples were prepared by electron beam evaporation of scandium 5 to 10 μm on a tungsten or molybdenum substrate. Scandium and deuterated scandium were used in the measurement. These relatively resistive films relative to the substrate were initially heated by thermal diffusion after an electrical pulse. This heat is diffused