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报道了一种用于卫星通讯系统,基于0·5μm栅长增强型赝配高电子迁移率晶体管的两级级联微波单片低噪声放大器.采用集总参数元件来缩小电路面积进而在整个芯片内完成阻抗匹配.在50Ω端口测试条件下,该低噪声放大器在3·5 ~4·3GHz频率范围内,噪声系数小于0·9dB,增益大于26dB,回波损耗小于-10dB.这是至今为止报道的增益高于20dB的低噪声放大器中具有最小噪声系数的微波单片低噪声放大器,它主要归因于采用具有优异噪声性能的增强型赝配高电子迁移率晶体管以及本文提出的源极串联电感结合漏极应用一个小的稳定电阻来减小输入匹配网络寄生电阻的电路结构.
A two-stage cascaded microwave monolithic low-noise amplifier based on a 0.5μm gate-length-enhanced pseudomodular high electron mobility transistor is reported for use in satellite communications systems. The lumped parameter components are used to reduce the area of the circuit, In the 50Ω port test conditions, the low noise amplifier in the 3.5 ~ 4 · 3GHz frequency range, the noise figure is less than 0.9dB, the gain is greater than 26dB, return loss less than -10dB.This is so far The reported microwave monolithic LNA with the lowest noise figure in low noise amplifiers with gain above 20 dB is mainly due to the use of enhanced pseudomorphic HEMTs with excellent noise performance and the proposed series of source series Inductor-tied Drain Apply a small, stable resistor to reduce the input circuitry that matches the network’s parasitic resistance.