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用化学和电学方法研究测定了６Ｈ－ＳｉＣ与元素金属（Ｎｉ，Ｍｏ）和硅化物（ＭｏＳｉ＿２，ＴａＳｉ＿２和ＴｉＳｉ＿２）的接触特性。用俄歇电子光谱（ＡＥＳ）化学分析技术研究了由热处理引起的界面反应。在退火过程中，用电学测量方法（电流－电压和电容－电压）测量了整流特性或欧姆接触特性。并尽可能地计算了势垒高度及接触电阻值。
The contact characteristics between 6H-SiC and elemental metals (Ni, Mo) and silicides (MoSi_2, TaSi_2 and TiSi_2) were determined by chemical and electrical methods. The interface reaction caused by heat treatment was studied by Auger electron spectroscopy (AES) chemical analysis technique. During annealing, the rectification characteristics or ohmic contact characteristics were measured using electrical measurement methods (current-voltage and capacitance-voltage). And as much as possible to calculate the barrier height and contact resistance.