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采用液相外延工艺成功制备了Tb3 + ∶YAGG单晶荧光层 ,研究了Tb3 + 激活YAG主晶格外延层中Ga3 + 掺杂的荧光敏化效应 ,可以看到在Tb3 + 荧光得到显著增强的同时 ,外延荧光层发光的饱和特性也有所改善。实验中观察到了Ga3 + 掺杂后基质晶体吸收边缘向长波方向展宽 ,并与Tb3 + 的7F6 9E、7E典型吸收峰发生交叠的现象 ,用基质与Tb3 + 之间的声子耦合解释了上述Tb3 + ∶YAGG外延层中所存在的能量传递、荧光敏化现象。基质与掺杂激活中心间能量传递机制的建立将会为基于YAG主晶格的高效荧光材料研究提供一个新的思路。
The Tb3 +: YAGG single crystal phosphor layer was successfully prepared by liquid phase epitaxy. The fluorescence sensitization effect of Ga3 + doping in the Tb3 + -activated YAG main lattice epitaxial layer was studied. It can be seen that Tb3 + fluorescence was significantly enhanced At the same time, the saturation of the luminescence of the epitaxial phosphor layer is also improved. In the experiment, we observed the phenomenon that the absorption edge of the matrix crystal broadens to the long wave direction after Ga3 + doping and overlaps with the typical absorption peaks of 7F6 9E and 7E of Tb3 +. The phonon coupling between the matrix and Tb3 + Energy Transfer in Tb3 +: YAGG Epitaxial Layer, Fluorescence Sensitization. The establishment of energy transfer mechanism between the host and the doping activation center will provide a new idea for the research of high efficient fluorescent materials based on the YAG host lattice.