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用热丝化学气相沉积方法研究了低温(~550℃)和低反应气压(~7 Torr)下硅片上金刚石膜的成核和生长.成核过程中采用2.5%的CH4浓度,在经充分超声波预处理的硅片上获得了高达1.5×1011cm-2的成核密度.随CH4浓度的增加所成膜中的金刚石晶粒尺寸由亚微米转变到纳米级.成功合成了表面粗糙度小于4nm、超薄(厚度小于500nm)和晶粒尺寸小于50nm的纳米金刚石膜.膜与衬底结合牢固.膜从可见光至红外的光吸收系数小于2×104cm-1.用我们常规的HFCVD技术,在低温度和低压下可以生长出表面光滑超薄的纳米金刚石膜.
The nucleation and growth of diamond films on silicon wafers with low temperature (~ 550 ℃) and low reaction pressure (~ 7 Torr) were investigated by hot wire chemical vapor deposition (CVD) method. 2.5% CH4 concentration was used in the nucleation process, The nucleation density of up to 1.5 × 1011cm-2 was obtained on the pre-treated silicon wafers.Due to the increase of CH4 concentration, the size of the diamond grains in the films changed from submicron to nanometer.The surface roughness of less than 4nm , Ultra-thin (less than 500nm) and nano-diamond film with grain size less than 50nm.The film is firmly bonded to the substrate.The light absorption coefficient of the film from visible light to infrared is less than 2 × 104cm-1. With our conventional HFCVD technology, Low temperature and low pressure can grow a smooth and thin surface of the nano-diamond film.