在低温HVPE-GaN/c-Al2O3模板上射频溅射ZnO作为缓冲层,采用氢化物气相外延(HVPE,hydridevapoarphaseepitaxy)法外延生长了高质量的GaN320μm厚膜。用高分辨率双晶X射线衍射仪(DCXRD)、原子力显微镜(AFM)和扫描电子显微镜(SEM)分析了制备的GaN厚膜特性。结果表明,GaN(0002)面的X射线摇摆曲线衍射峰半高宽(FWHM)为336.15arcsec,穿透位错密度(TDD)为107cm-2,外延生长的GaN厚膜晶体质量较好,可以作为自支撑GaN衬底。 ZnO was sputtered on the low temperature HVPE-GaN / c-Al2O3 template as a buffer layer and high quality GaN320μm thick films were epitaxially grown by hydride vapor phase epitaxy (HVPE). The properties of GaN films prepared by DCXRD, AFM and SEM were analyzed. The results show that the full width at half maximum (FWHM) of the X-ray rocking curve of GaN (0002) is 336.15 arcsec and the TDD is 107 cm-2. The epitaxial growth of GaN thick film shows good crystal quality, As a self-supporting GaN substrate.