论文部分内容阅读
利用Kronig-Penney模型从理论上计算了Si/SiO2和Si/SiNx/SiO2多层膜结构中量子阱的能带结构,进一步分析了各亚层薄膜厚度对能带结构和有效质量的影响.结果发现,适当减少亚层的厚度都能使得纳米Si薄膜的带隙发生明显宽化.在Si/SiO2超晶格中,Si量子阱层带隙能量随着Si层厚度的变化符合EPL(eV)=1.6+0.7/d2关系,与我们的计算结果十分吻合.在Si/SiNx/SiO2超晶格系统中,可以通过控制各亚层厚度,尤其是Si和SiNx层厚度,均能够有效地控制发光.
The band structures of quantum wells in Si / SiO2 and Si / SiNx / SiO2 multilayers were calculated theoretically by Kronig-Penney model, and the influence of each sublayer thickness on the band structure and effective mass was further analyzed. Results It is found that the bandgap of the Si thin film can be significantly broadened by appropriate reduction of the thickness of the sublayer.In the Si / SiO2 superlattice, the bandgap energy of the Si quantum well layer changes with the Si layer thickness in line with the EPL (eV) = 1.6 + 0.7 / d2, which is in good agreement with our calculation. In the Si / SiNx / SiO2 superlattice system, the luminescence can be effectively controlled by controlling the thickness of each sublayer, especially the Si and SiNx layer thicknesses .