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本文分析了GaAs纯度外延片阳极氧化的物理过程,对比了恒压法与恒流法的优缺点,以恒流恒压法制得了高质量的氧化膜。
In this paper, the physical process of anodization of GaAs epitaxial wafers was analyzed. The advantages and disadvantages of constant voltage method and constant current method were compared. High quality oxide film was obtained by constant current and constant voltage method.