本文报道了脊形波导结构ＧａＡｓ／ＡｌＧａＡｓ量子阱激光器的研究成果．我们采用湿法化学腐蚀方法，通过对器件结构参数的优化，制备了性能优越的脊形波导ＧａＡｓ／ＡｌＧａＡｓ量子阱激光器，器件的阈值电流低于１０ｍＡ，最低值为７．３ｍＡ，而且实现了基横模工作，这是国内报道的该结构激光器的最好水平． This paper reports the research results of the rib waveguide structure GaAs / AlGaAs quantum well laser. We use the wet chemical etching method, through the optimization of the device structure parameters, prepared a superior performance of the ridge waveguide GaAs / AlGaAs quantum well lasers, the device threshold current is less than 10mA, the minimum value of 7.3mA, and the realization of the base Horizontal mode of work, which is reported in the country the best level of the structure of the laser.