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XPS was used to analyse the GaAs(100) substrate before and after concentrated HO treatment. The untreated RTO GaAs(100) surface has a 0.17nm thick oxide overlayer on it. HC1 treatment canremove this oxide layer and form a layer of Cl-contaimng species——GaClx. The 355 nm and 193 nm laserwas tried to study the ’laser induced desorption of GaCl,. XPS was also used to monitor the change of Cl quantity by laser irradiation. The results show that the 355 nm laser induces a thermal desorption of GaClx. By the behavior of the thermal desorption, we conclude that the GaClx on the HC1 treated GaAs(100) surface may be GaCl. The 193 nm laser can dissociate GaCl and induce a photo dissociation desorption of Cl.
XPS was used to analyze the GaAs (100) substrate before and after concentrated HO treatment. The untreated RTO GaAs (100) surface has a 0.17 nm thick oxide overlayer on it. HC1 treatment can remodel this oxide layer and form a layer of Cl-contaimng The results show that the 355 nm laser induces a thermal. species - GaClx. The 355 nm and 193 nm laserwas tried to study the ’laser induced desorption of GaCl ,. XPS was also used to monitor the change of Cl quantity by laser irradiation. desorption of GaClx. By the behavior of the thermal desorption, we conclude that the GaClx on the HC1 treated GaAs (100) surface may be GaCl. The 193 nm laser can dissociate GaCl and induce a photo dissociation desorption of Cl.