Low-field magnetoresistance of (1-x)La_(0.6)Dy_(0.1)Sr_(0.3)MnO_3/0.5x (Sb_2O_3) composite system un

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A series of (1-x)La0.6Dy0.1Sr0.3MnO3/0.5x(Sb2O3)(x=0.15) samples were prepared by the solid-state reaction method, and the influence of sintering temperature of the matrix on low-field magnetoresistance of (1-x)La0.6Dy0.1Sr0.3MnO3/0.5x (Sb2O3) was studied through the measurements of X-ray diffraction (XRD) patterns, scanning electron microscope (SEM) image, resistivity-temperature (ρ-T) curves, and magnetoresistance-temperature (MR-T) curves. The results indicate that for the samples with low sintering temperature of the matrix, lowfield magnetoresistance effect appears on the whole temperature range and can be explained by grain boundary effect; for the sample with high sintering temperature of the matrix, intrinsic magnetoresistance peak appears on the high-temperature range, low-field magnetore-sistance effect appears on low temperature range, and the magnetoresistance in the magnetic field of 0.2 T and on the comparatively large temperature range between 280 K and 225 K hardly changes with temperature and remains at 4.8%, which can be explained by the competition between the intrinsic magnetoresistance induced by double-exchange function inside grains and the tunneling magnetoresis-tance (TMR) induced by grain boundary effect. The temperature stability of magnetoresistance is beneficial to the practical applications of MR. A series of (1-x) La0.6Dy0.1Sr0.3MnO3 / 0.5x (Sb2O3) (x = 0.15) samples were prepared by the solid-state reaction method, and the influence of sintering temperature of the matrix on low-field magnetoresistance of (1-x) La0.6Dy0.1Sr0.3MnO3 / 0.5x (Sb2O3) was studied through the measurements of X-ray diffraction (XRD) patterns, scanning electron microscope ) curves, and magnetoresistance-temperature (MR-T) curves. The results indicate that for the samples with low sintering temperature of the matrix, low field magnetoresistance effect appears on the whole temperature range and can be explained by grain boundary effect; for the sample with high sintering temperature of the matrix, intrinsic magnetoresistance peak appears on the high-temperature range, low-field magnetore-sistance effect on low temperature range, and the magnetoresistance in the magnetic field of 0.2 T and on the comparatively large temperature range between 280 K and 225 K hardly cha nges with temperature and remains at 4.8%, which can be explained by the competition between the intrinsic magnetoresistance induced by double-exchange function inside grains and the tunneling magnetoresis- tance (TMR) induced by grain boundary effect. The temperature stability of magnetoresistance to the practical applications of MR.
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