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用分子束外延法将ＧｅＳｉ／Ｓｉ超晶格结构生长在ｎ＋／ｎＳｉ材料上，先后用反应离子刻蚀法形成探测器波导和硅脊波导，经适当工艺实现硅波导与ＰＩＮ探测器之间的光电集成，５Ｖ偏压下ＰＩＮ探测器的最小暗电流为０．８μＡ，最大光响应电流为２．７μＡ，最大总量子效率为１４％，工作波长为λ＝１．３μｍ。
The GeSi / Si superlattice structure is grown on n + / nSi by molecular beam epitaxy. The detector waveguide and the silicon ridge waveguide are formed by reactive ion etching, and the silicon waveguide and PIN detector The optoelectronic integrated PIN detector at 5V bias has a minimum dark current of 0.8μA, a maximum photoresponse current of 2.7μA, a maximum total quantum efficiency of 14% and a working wavelength of λ = 1.3μm.