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A fully integrated low power RF transmitter for a WiMedia 3.1-4.8 GHz multiband orthogonal frequency division multiplexing ultra-wideband system is presented.With a separate transconductance stage,the quadrature up-conversion modulator achieves high linearity with low supply voltage.The co-design of different resonant fre-quencies of the modulator and the differential to single (D2S) converter ensures in-band gain flatness.By means of a series inductor peaking technique,the D2S converter obtains 9 dB more gain without extra power consumption.A divided-by-2 divider is used for carrier signal generation.The measurement results show an output power between -10.7 and -3.1 dBm with 7.6 dB control range,an OIP3 up to 12 dBm,a sideband rejection of 35 dBc and a carrier rejection of 30 dBc.The ESD protected chip is fabricated in the Jazz 0.18 μm RF CMOS process with an area of 1.74 mm 2 and only consumes 32 mA current (at 1.8 V) including the test associated parts.
A fully integrated low power RF transmitter for a WiMedia 3.1-4.8 GHz multiband orthogonal frequency division multiplexing ultra-wideband system is presented. A separate transconductance stage, the quadrature up-conversion plate achieves high linearity with low supply voltage. The co-design of different resonant fre-quencies of the modulator and the differential to single (D2S) converter ensures in-band gain flatness. BY the means of a series inductor peaking technique, the D2S converter obtains 9 dB more gain without extra power consumption. A divided- by-2 divider is used for carrier signal generation. The measurement results show an output power between -10.7 and -3.1 dBm with a 7.6 dB control range, an OIP3 up to 12 dBm, a sideband rejection of 35 dBc and a carrier rejection of 30 dBc. The ESD protected chip is fabricated in the Jazz 0.18 μm RF CMOS process with an area of 1.74 mm 2 and only consumes 32 mA current (at 1.8 V) including the test associated parts.