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在本文，我们用一个低组分的InxGa(1-x)As缓冲层（x～0．01），有效地限制了50周期的In0.3Ga0．7As／GaAs应变超晶格本身弛豫所产生的位错，X射线双晶衍射测量结果表明使用这样缓冲层的超晶格质量明显改善，可以观察到12级卫星峰，而在没有这个缓冲层的样品上只能观察到3个衍射卫星峰．透射电子显微镜上观察到产生的位错被限制在这个缓冲层中或弯曲进入了衬底而没有进入所需要的外延层。
Here we use a low-component InxGa (1-x) As buffer layer (x ~ 0.01) that effectively limits the 50-cycle relaxation of the In0.3Ga0.7As / GaAs strained superlattices themselves X-ray double crystal diffraction measurements show that the quality of the superlattice using such a buffer layer is significantly improved, a 12-satellite peak can be observed, and only 3 diffraction satellite peaks can be observed on a sample without this buffer layer . The dislocations observed on the transmission electron microscope are confined in this buffer layer or bend into the substrate without entering the desired epitaxial layer.