论文部分内容阅读
电子束诱导沉积技术已被证实可以实现各种材料的分形生长,但是目前尚未发现聚焦电子束辐照下低维纳米结构表面未受辐照位置的分形生长现象,造成了聚焦电子束诱导分形生长机理研究的空白与片面性.以透射电子显微镜中残留的有机气体分子为前驱体,室温下利用高能聚焦电子束辐照,研究了一维非晶SiOx纳米线表面未受辐照位置碳沉积的分形生长.利用高分辨透射电子显微镜对SiOx纳米线表面非晶碳的沉积过程进行原位观察,发现了SiOx纳米线表面未受辐照位置非晶碳的不均匀沉积及分形生长,并捕捉到了碳沉积分形生长过程的细节.同时对聚焦电子束诱导SiOx纳米线表面未受辐照位置非晶碳的不均匀沉积及分形生长机理进行了深入的探索.
Electron beam induced deposition technology has been proved to achieve the fractal growth of various materials, but the phenomenon of fractal growth at the unirradiated position on the surface of low-dimensional nanostructures under focused electron beam irradiation has not been found so far, resulting in the fact that the focused electron beam induces fractal growth Mechanisms of blank and one-sidedness of the mechanism The residual organic gas molecules in TEM were used as precursors. The high-energy focused electron beam irradiation at room temperature was used to study the fractal features of uncoated carbon nanowires Growth.Using high-resolution transmission electron microscopy to observe the deposition process of amorphous carbon on the surface of SiOx nanowires, the inhomogeneous deposition and fractal growth of amorphous carbon on the surface of SiOx nanowires were observed and carbon The details of the depositional fractal growth process and the mechanism of inhomogeneous deposition and fractal growth of amorphous carbon on the surface of uncoated SiOx nanowires by focused electron beam are also discussed.