本文首先从理论上分析FLOTOXEEPROM隧道氧化层中陷阱俘获电荷对注入电场和存储管阈值电压的影响 ,然后给出了在不同擦写条件下FLOTOXEEPROM存储管的阈值电压与擦写周期关系的实验结果 ,接着分析了在反复擦写过程中陷阱俘获电荷的产生现象 .对于低的擦写电压 ,擦除阈值减少 ,在隧道氧化层中产生了负的陷阱俘获电荷 ;对于高的擦写电压 ,擦除阈值增加 ,产生了正陷阱俘获电荷 .这一结果与SiO2 中电荷的俘获———解俘获动态模型相吻合 . In this paper, firstly, the theoretical analysis of the effect of trapping charge on the injected electric field and the threshold voltage of the storage tube in FLOTOXEEPROM tunnel oxide layer is given, and then the experimental results of the relationship between the threshold voltage and the erase / write cycle of the FLOTOXEEPROM memory tube under different erase and write conditions are given. Then, the generation of trapped traps during repeated erase and write is analyzed, and the erase threshold is reduced for low erase and write voltages and a negative trap trap charge is generated in the tunnel oxide layer. For high erase voltages, erase The threshold increases and positive trap trapping charges are generated, a result consistent with the charge-capture dynamic model of SiO2 charge-capture.