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应用深能级瞬态谱（ＤＬＴＳ）技术研究分子束外延（ＭＢＥ）和二次液相外延（ＬＰＥ）生长的ＩｎＧａＡｓ／ＧａＡｓ应变层量子季阱激光器深中心行为．在ＭＢＥ激光器的ｎ－ＡｌｘＧａ１－ｘＡｓ组分缓变层和限制层里，除众所周知的ＤＸ中心外，还观察到有较大俘获截面的深（空穴、电子）陷阱及其相互转化．这些陷阱可能分布在ｘ从０到０．４０和ｘ—０．４０的ｎ－ＡｌｘＧａ１－ｘＡｓ层里ｘ值不连续的界面附近．而在ＬＰＥ激光器的ｎ－ＡｌｘＧａ１－ｘＡｓ组分缓变层和限制层里，ＤＸ中心浓度明显减少，且深（空穴、电子）陷阱消失，这表明ＬＰＥ掩埋结构工艺可能对激光器深中心的消除或减少有一定作用．深中心的变化与样品阈值电流密度的改善是相符的．
The deep center stage behavior of InGaAs / GaAs strained quantum well laser with molecular beam epitaxy (MBE) and secondary liquid phase epitaxy (LPE) growth is studied using deep level transient spectroscopy (DLTS). In the n-AlxGa1-xAs buffer layer and confinement layer of the MBE laser, in addition to the well-known DX centers, deep (hole, electron) traps with larger capture cross sections and their interconversion are also observed. These traps may be distributed in the vicinity of x-discontinuities in the n-AlxGa1-xAs layer with x ranging from 0 to 0.40 and x-0.40. In the LPE laser’s n-AlxGa1-xAs component graded layer and confinement layer, the concentration of DX center is significantly reduced and the deep (hole, electron) traps disappear, indicating that the LPE buried structure process may eliminate the deep center of the laser Or reduce a certain role. The change in deep center is consistent with the improvement of the threshold current density of the sample.