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利用高能重离子（Ｋｒ， Ｘｅ， Ｓｎ和Ｐb ）辐照处于 １６或 １００ Ｋ的低熔点纯金属 Ｂｉ，通过测量分析辐照引起的样品电阻率增量及其变化速率随辐照剂量的变化，研究了入射离子在Ｂｉ中引起的辐照损伤效应如辐照损伤效率及复杂缺陷的产生等．结果表明，强的电子能损可在纯金属Ｂｉ中引起附加缺陷的产生，从而使得辐照损伤效率＞１．电子能损值大时，入射离子在Ｂi中引起的辐照效应主要是电子能损效应．辐照温度和入射离子速度对辐照效应的强弱有一定的影响．
By using high-energy heavy ions (Kr, Xe, Sn and Pb) to irradiate the low melting point pure metal Bi at 16 or 100 K, the increment of the sample resistivity and the change rate of the sample with the irradiation dose are analyzed and measured through the measurement and analysis, The effects of incident ions on the irradiation damage induced by Bi, such as the radiation damage efficiency and the generation of complex defects, were studied. The results show that the strong electron damage can cause additional defects in the pure metal Bi, so that the radiation damage efficiency> 1. When the electron loss is large, the radiation effect caused by incident ions in Bi is mainly the electron loss effect. Irradiation temperature and incident ion velocity have some influence on the intensity of radiation.