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光子晶体是一种新型的光波导材料,具有优良的导光性能。亚微米级光子晶体的加工对几何形状要求相当高。聚焦离子束在文中被用作直接写入技术,用于制备亚微米级的圆孔光子晶体。如何在硅基上优化聚焦离子束制备参数是该文的重点。讨论了不同电流不同点刻蚀时间下的刻蚀效果,采用边缘冗余刻蚀方式的刻蚀效果以及不同深度的孔洞的加工。结果表明,选择合适的刻蚀电流和点刻蚀时间对光子晶体加工非常重要。
Photonic crystal is a new type of optical waveguide material with excellent light guiding performance. Submicron photonic crystal processing geometry requirements are quite high. Focused ion beams are used herein as direct writing techniques for the preparation of submicron-level, round-hole photonic crystals. How to optimize the focused ion beam preparation parameters on Si substrate is the key point of this paper. The effects of etching at different current etching time, etching effect by using edge redundancy etching method and processing of holes with different depths are discussed. The results show that the choice of the appropriate etching current and etching time is very important for photonic crystal processing.