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A mesa-type enhanced InGaAs/InAlAs multilayer heterostructure (MLHS) terahertz photoconductive antenna (PCA) at 1550 nm is demonstrated on an InP substrate.The InGaAs/InA1As superlattice multilayer heterostructures are grown and studied with different temperatures and thickness ratios of InGaAs/InAlAs.The PCAs with different gap sizes and pad sizes are fabricated and characterized.The PCAs are evaluated as THz emitters in a THz time domain spectrometer and we measure the optimized THz bandwidth in excess of 2 THz.