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半导体业已经迈入14 nm制程,2014年开始量产。如果从工艺制程节点来说,传统的光学光刻193 nm浸液式采用两次或者四次图形曝光(DP)技术可能达到10 nm,这意味着如果EUV技术再次推迟应用,到2015年制程将暂时在10 nm徘徊。除非等到EUV技术成熟,制程才能再继续缩小下去。依目前的态势,即便EUV成功也顶多还有两个台阶可上,即7 nm或者5 nm。因为按理论测算,在5 nm时可能器件已达到物理极限。
The semiconductor industry has entered the 14 nm process, mass production in 2014. Conventional photolithographic 193 nm immersion processes can reach 10 nm with either two or four pattern exposure (DP) techniques from a process node, which means that if the EUV technology is postponed again, by 2015 the process will Temporarily wandering at 10 nm. Unless the EUV technology is mature, the process can continue to shrink. According to the current situation, there are at most two steps to be successful even if the EUV is successful, that is, 7 nm or 5 nm. Because it is theoretically possible to calculate the device at 5 nm may have reached the physical limit.