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提出了一款4G频段全覆盖高输出功率高效率功率放大器。设计采用的是Cree公司提供的Ga N HEMT晶体管CGH40025F。基于F类功率放大器的设计理论,通过对晶体管的输入输出端均采用谐波控制网络,并将渐变式阻抗匹配这种宽带匹配方法应用到输入输出端的基波匹配当中。在实现二次谐波阻抗匹配至低阻抗区,三次谐波阻抗匹配至高阻抗区的同时基波阻抗被匹配至50Ω附近,从而有效提高了功率放大器的输出功率、效率和带宽。最终的测试结果表明在1.7~2.7 GHz频率范围内,漏极效率维持在62.55%~76%,输出功率在20~41W,增益在10 d B以上。仿真与实测结果基本一致。
Proposed a 4G band full coverage high output power high efficiency power amplifier. The design uses the Ga N HEMT transistor CGH40025F from Cree. Based on the design theory of F-type power amplifier, a harmonic control network is adopted for the input and the output terminals of the transistor, and a gradual impedance matching method for broadband matching is applied to the fundamental matching of the input and output terminals. In order to achieve the second harmonic impedance matching to the low impedance region, the third harmonic impedance matching to the high impedance region is matched to 50Ω near the fundamental impedance, so as to effectively improve the power amplifier output power, efficiency and bandwidth. The final test results show that the drain efficiency is maintained at 62.55% ~ 76% within 1.7 ~ 2.7 GHz, the output power is 20 ~ 41W, and the gain is above 10 dB. Simulation and measured results are basically the same.