本文提出以苯并环丁烯(benzocyclobutene,BCB)或硅为介质层材料,用碳纳米管(Carbon Nanotube,CNT)填充的屏蔽型硅通孔(Shielded Through-Silicon Vias,S-TSV)结构,利用等效传输线模型计算了其正向传输系数和衰减常数,分析了量子电容(Quantum Capacitance,Cq)对S-TSV传输性能的影响。研究发现,Cq能改善以BCB为介质层,填充多壁碳纳米管束(Multi-walled carbon nanotube bundle,MWCNTB)的S-TSV高于20GHz频段的传输性能。此外,Cq可以明显提升以硅为介质层的S-TSV的传输性能,且Cq的温度效应能与硅电导的温度效应平衡,从而提高S-TSV的热稳定性。 In this paper, a Shielded Through-Silicon Vias (S-TSV) structure filled with carbon nanotubes (CNTs) and containing benzocyclobutene (BCB) or silicon is proposed. The equivalent transfer line model was used to calculate the forward transfer coefficient and the decay constant, and the effect of Quantum Capacitance (Cq) on the transmission performance of S-TSV was analyzed. The results show that Cq can improve the transmission performance of S-TSV with multi-walled carbon nanotube bundle (MWCNTB) higher than 20GHz with BCB as the dielectric layer. In addition, Cq can significantly improve the transmission performance of silicon-based S-TSV, and the temperature effect of Cq can balance with the temperature effect of silicon conductance to improve the thermal stability of S-TSV.