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采用雪崩热电子注入技术研究了富氮 Si Ox Ny 纳米级薄膜的陷阱特性。观察到该薄膜存在着受主型电子陷阱 ,随着注入的增长、界面上产生的这种陷阱将起主导作用 ,其密度大过施主型界面电子陷阱。揭示出界面陷阱密度在禁带中分布 ,其密度随雪崩注入剂量增加而增大 ,禁带上半部增大得尤其显著。指出雪崩注入过程中在 Si/ PECVD Si Ox Ny 界面上产生两种性质不同的电子陷阱 ,并给出它们在禁带中的位置及密度大小关系。支持了界面陷阱来源于悬挂键的物理模型 ,由于本实验的重要结果可用该理论模型圆满地解析。给出 PECVD形成纳米级薄膜的优化工艺条件 ,该条件成膜的界面特性良好、耐压范围高、抗雪崩注入能力及其他电子特性也较好
The avalanche hot electron injection technique was used to study the trap characteristics of nitrogen-rich Si Ox Ny nanoscale films. It is observed that there is an acceptor-type electron trap in this film. With the increase of the injection, the trap generated at the interface will play a leading role, and its density is greater than that of the donor-type interface electron trap. It is revealed that the interface trap density is distributed in the forbidden band and its density increases with the increase of avalanche injection dose. The upper half of the band gap increases significantly. It is pointed out that two kinds of electron traps with different properties are generated on the Si / PECVD Si Ox Ny interface during the avalanche implantation, and their position in the forbidden band and the density relationship are given. Supports interface traps derived from the physical model of the dangling bond, as the important results of this experiment can be satisfactorily resolved using this theoretical model. The optimal process conditions for the formation of nanoscale films by PECVD are given. The film has good interface characteristics, high breakdown voltage range, good resistance to avalanche injection and other electronic properties