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通过对不同退火条件下ErYb共掺Al2O3薄膜光致荧光(PL)光谱的系统分析,研究了高ErYb掺杂浓度所导致的晶体场变化对薄膜PL光谱的影响,并结合薄膜结构分析,探讨了Al2O3薄膜的结晶状态在Er3+激活、PL光谱宽化中的作用及可能的物理机理.研究结果表明退火处理所导致的Er3+PL光谱的变化与薄膜的微观状态之间有着密切的联系.在600—750℃范围内,薄膜呈非晶态结构,薄膜荧光强度的增加主要是薄膜内缺陷减少所致;在800—900℃范围内,γAl2O3相的出现是导致荧光强度明显增加的主要原因;当退火温度为1000℃时,Er,Yb的大量析出致使荧光强度的急剧下降.此外,对PL光谱线形分析表明,各子能级跃迁的相对强度变化是导致荧光光谱宽化的主要因素.
Through the systematic analysis of PL spectra of ErYb codoped Al 2 O 3 thin films with different annealing conditions, the influence of the change of the crystal field caused by the high ErYb doping concentration on the PL spectra of the films was investigated. In addition, with the analysis of the film structure, Al2O3 crystalline state in Er3 + activation, PL spectral broadening role and possible physical mechanism.The results show that the annealing process caused Er3 + PL spectrum changes and the micro-state of the film has a close relationship between the 600 -750 ℃, the film shows an amorphous structure. The increase of the fluorescence intensity of the film is mainly caused by the decrease of the defects in the film. In the range of 800-900 ℃, the appearance of γAl2O3 phase is the main reason that the fluorescence intensity increases obviously. When the annealing temperature is 1000 ℃, the fluorescence intensity declines sharply due to the large amount of Er and Yb precipitation.In addition, the linear analysis of PL spectra shows that the relative intensity change of each sub-level transition is the main factor leading to the widening of the fluorescence spectrum.