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采用压应变InGaAs量子阱和张应变InGaAs准体材料交替混合的有源结构,研制了宽带偏振不灵敏的半导体光放大器.此放大器在100~250mA的工作电流范围内,获得了大于 70nm的 3dB光带宽;在 0~250mA工作电流和3dB光带宽波长范围内,偏振灵敏度小于 1dB.对于 1 55μm 的信号光,在 200mA 的注入电流下获得了15 6dB的光纤到光纤的增益、小于0 7dB的偏振灵敏度和4 2dBm的饱和输出功率.
A broadband polarization-insensitive semiconductor optical amplifier was developed by alternating mixing of strain-in-strain InGaAs quantum well and strain-in-place InGaAs quasi-body material. The amplifier obtained 3dB light of more than 70nm in the operating current range of 100 ~ 250mA Bandwidth; polarization sensitivity is less than 1dB at 0 ~ 250mA operating current and 3dB optical bandwidth wavelength. For a signal light of 55μm, a gain of 156dB at a fiber-to-fiber gain of 200dB is obtained, a polarization of less than 0 7dB Sensitivity and 4 2dBm saturated output power.