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报道了用硅离子注入热氧化生长的SiO2 层后热退火的方法制备纳米硅样品,并在室温下测量了样品的光致发光谱及其退火温度的关系.实验结果表明,在800℃以下退火的样品的发光是由于离子注入而引入SiO2 层的缺陷发光.在900℃以上退火,才观察到纳米硅的发生,在1100℃下退火,纳米硅发光达到最强.纳米硅的发光峰随退火温度升高而红移呈量子尺寸效应.在直角散射配置下,首次观察到纳米硅的特征拉曼散射峰,进一步证实了光致发光谱的结果.“,”The samples of silicon nanocrystals (nc Si) were prepared by Si ion implanted into SiO 2 layers.Photoluminescence spectra were measured at room temperature and their dependence on thermal annealing was investigated. The experimental results show that PL peaks originate from the defects in SiO 2 layers caused by ion implantation when the thermal annealing temperature is lower than 800℃. The PL peak from nc Si was observed when the thermal annealing temperature was higher than 900℃,and PL intensity reached its maximum at the thermal annealing temperature of 1100℃. As the annealing temperature increases the red shift of PL peak from nc Si shows the quantum size effect. The characterized Raman scattering peak of nc Si was observed at the right angle scattering configuration for the first time. It provides further support for the PL measurements.